彼时,新兴技术正从边缘切入,重构存储生态。比如MRAM(磁阻存储器)兼具SRAM速度、DRAM密度与Flash非易失性,已在车规级MCU、工业控制器中商用,三星、台积电、英特尔等均在持续推进该技术进展。ReRAM(阻变存储器)单元面积小,读写速度是NAND的1000倍,同时功耗可以降低15倍。CXL(Compute Express Link)虽非存储介质,却是内存池化的关键。通过CXL,服务器可将多个DRAM/HBM模块虚拟为统一内存池,大幅提升AI训练效率。Intel、AMD、三星正推动其成为下一代数据中心标配。不过,新兴存储并非要“取代”DRAM或NAND,而是填补其无法覆盖的“价值缝隙”。未来将是“传统+新兴”的分层共存格局。
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typical IBM terminology) showed whatever the computer sent as the body of a